Solid-state imaging device and electronic apparatus having a light blocking part

ABSTRACT

A solid-state imaging device including a plurality of pixel units configured and disposed in an imaging area in such a way that a plurality of pixels corresponding to different colors are treated as one unit, the amount of shift of a position of each of the pixels in the pixel unit being set as to differ depending on distance from a center of the imaging area to the pixel unit and a color.

RELATED APPLICATION DATA

This application is a continuation reissue of U.S. patent applicationSer. No. 14/805,750, filed Jul. 21, 2015, which is an application forreissue of U.S. patent application Ser. No. 13/529,502, filed Jun. 21,2012, now U.S. Pat. No. 8,493,452, which is a division of U.S. patentapplication Ser. No. 12/705,152, filed on Feb. 12, 2010, now U.S. Pat.No. 8,243,146, the entirety of which is are incorporated herein byreference to the extent permitted by law. The present invention claimspriority to and contains subject matter related to Japanese PatentApplication JP 2009-038943 filed in the Japan Patent Office on Feb. 23,2009, the entire contents of which being incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to solid-state imaging devices andelectronic apparatus. Specifically, the present invention relates to asolid-state imaging device and electronic apparatus in which pluralpixels corresponding to different colors are included in one pixel unitand the pixel units are disposed in a matrix in the imaging area.

2. Description of the Related Art

Semiconductor image sensors typified by complementary metal oxidesemiconductor (CMOS) image sensors are desired to include more pixels,i.e. achieve reduction in the pixel size and increase in the number ofpixels in the same image area. Japanese Patent Laid-open No. 2001-160973discloses a solid-state imaging device having a microlens, a colorfilter, and an aperture of a light blocking film that are disposed withthe amount of shift calculated based on the output angle defined withthe image height and the exit pupil distance and the film thickness fromthe microlens to a light receiving part. Japanese Patent Laid-open No.2008-78258 discloses a solid-state imaging device in which thesensitivity setting is changed on a color-by-color basis. JapanesePatent Laid-open No. Sho 62-42449 discloses a solid-state imaging devicein which the aperture area of a light blocking film is made differentdepending on the color. Japanese Patent Laid-open No. 2007-288107discloses a solid-state imaging device in which a color filter is sodisposed as to be shifted to thereby prevent the occurrence of colorshading.

SUMMARY OF THE INVENTION

However, the amount of signal becomes smaller along with the increase inthe number of pixels, and it is becoming difficult to ensure the sameS/N ratio (signal/noise ratio). In particular, the disturbance of thecolor balance is caused attributed to that the deterioration of theamount of signal is significant when the angle of view of the lens islarge and the deterioration of the amount of signal differs on acolor-by-color basis.

There is a need for the present invention to suppress the disturbance ofthe color balance due to the angle of view of the lens.

According to a mode of the present invention, there is provided asolid-state imaging device including a plurality of pixel unitsconfigured to be disposed in an imaging area in such a way that aplurality of pixels corresponding to different colors are treated as oneunit. In this solid-state imaging device, the amount of shift of theposition of each of the pixels in the pixel unit is so set as to differdepending on the distance from the center of the imaging area to thepixel unit and a color.

In this mode of the present invention, because the amount of shift ofthe disposing, set for the pixels in the pixel unit over the area fromthe center of the imaging area to the periphery thereof, differsdepending on the distance from the center of the imaging area to thepixel unit and the color, color shift in the pixel unit can besuppressed over the area from the center of the imaging area to theperiphery thereof.

According to another mode of the present invention, there is provided asolid-state imaging device including a plurality of pixel unitsconfigured to be disposed in a matrix in an imaging area in such a waythat a plurality of pixels corresponding to different colors are treatedas one unit, and a light blocking part configured to be providedcorresponding to the plurality of pixel units and have aperturescorresponding to the pixels in the pixel unit. In this solid-stateimaging device, the amount of shift of the position of the aperture ofthe light blocking part for each of the pixels in the pixel unit is soset as to differ depending on the distance from the center of theimaging area to the pixel unit and a color.

In this mode of the present invention, the amount of shift of theposition, set for the apertures of the light blocking part for thepixels in the pixel unit over the area from the center of the imagingarea to the periphery thereof, differs depending on the distance fromthe center of the imaging area to the pixel unit and the color, colorshift in the pixel unit can be suppressed over the area from the centerof the imaging area to the periphery thereof.

According to another mode of the present invention, there is providedelectronic apparatus including the above-described solid-state imagingdevice. In this electronic apparatus, a circuit that processes a signalobtained by the pixels in the solid-state imaging device may be formedof a CMOS transistor. Furthermore, the pixels may be so configured as tocapture light from a surface on the opposite side to a surface overwhich an interconnect layer is formed, of a substrate. In addition, atransfer part that transfers a charge captured in the pixels bysequential applying of potential with different phases may be provided.

The pixel in the modes of the present invention refers to a region thatcarries out photoelectric conversion, and encompasses not only a regionstructurally separated by element isolation but also a region separatedin terms of the output electric signal. Furthermore, the pixel unitencompasses not only a unit that is a set of plural pixels and isstructurally separated but also a unit that is conveniently separated atthe boundary of the repetition of sets each composed of plural pixels.

According to the modes of the present invention, it becomes possible tosuppress the disturbance of the color balance due to the angle of viewof the lens and obtain a signal without color cross-talk over the areafrom the center of the imaging area to the periphery thereof.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic sectional view for explaining a back-illuminatedCMOS sensor;

FIG. 2 is a schematic sectional view for explaining a back-illuminatedCMOS sensor having a light blocking part;

FIG. 3 is a schematic sectional view for explaining a front-illuminatedCMOS sensor;

FIG. 4 is a diagram for explaining the entire configuration of a CMOSsensor;

FIG. 5 is a circuit diagram showing one example of the circuitconfiguration of a unit pixel;

FIGS. 6A and 6B are schematic diagrams for explaining a CCD sensor;

FIG. 7 is a schematic plan view for explaining the layout in an imagingarea;

FIG. 8 is a diagram showing an example of the energy profile in a pixelunit;

FIGS. 9A and 9B are (first) diagrams for explaining change in the energyprofile dependent on the image height;

FIGS. 10A and 10B are (second) diagrams for explaining change in theenergy profile dependent on the image height;

FIG. 11 is a schematic diagram showing plan view of apertures of a lightblocking part;

FIG. 12 is a schematic diagram for explaining a first embodiment of thepresent invention;

FIG. 13 is a schematic diagram for explaining a second embodiment of thepresent invention;

FIG. 14 is a schematic diagram for explaining a third embodiment of thepresent invention;

FIG. 15 is a schematic diagram for explaining a fourth embodiment of thepresent invention;

FIG. 16 is a diagram for explaining difference in the amount of shiftfrom color to color;

FIGS. 17A and 17B are diagrams showing the effect of the embodiment; and

FIG. 18 is a block diagram showing a configuration example of imagingapparatus as one example of electronic apparatus based on theembodiment.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Modes for carrying out the present invention (hereinafter, referred toas “embodiments”) will be described below. The description will be madein the following order.

1. Configuration Examples of Solid-state Imaging Device(Back-illuminated CMOS Sensor, Front-illuminated CMOS Sensor,Configuration of CMOS Image Sensor, and CCD Sensor)

2. Energy Profile (Profile in Pixel Unit and Change Dependent on ImageHeight)

3. First Embodiment (Setting of Positions of Pixels)

4. Second Embodiment (Setting of Light Reception Areas of Pixels)

5. Third Embodiment (Setting of Positions of Apertures of Light BlockingPart)

6. Fourth Embodiment (Setting of Sizes of Apertures of Light BlockingPart)

7. Electronic Apparatus (Example of Imaging Apparatus)

1. Configuration Examples of Solid-State Imaging Device

Configuration examples of a solid-state imaging device according to theembodiments will be described below.

[Back-Illuminated CMOS Sensor]

FIG. 1 is a schematic sectional view for explaining a back-illuminatedCMOS sensor. In this solid-state imaging device 1, a color filter 60 isprovided over one surface of a silicon substrate 2 in which lightreceiving regions serving as pixels 10 are provided, and an interconnectlayer 40 for signals obtained by photoelectric conversion in the lightreceiving regions is provided over the other surface of the siliconsubstrate 2. Due to this feature, the solid-state imaging device 1 has aconfiguration in which light is incident on the light receiving regionsfrom the surface on the opposite side to the surface over which theinterconnect layer 40 is provided and the photoelectric conversion iscarried out in the light receiving regions.

In the solid-state imaging device 1, the light receiving regions of therespective colors formed in the silicon substrate 2 are isolated fromeach other by element isolating parts 20. Over the light receivingregions, the color filter 60 is formed with the intermediary of anantireflection film 21 and an interlayer insulating film 30. The colorfilter 60 is based on e.g. the Bayer array in matching with thearrangement of the light receiving regions corresponding to therespective colors of red (R), green (G), and blue (B). Microlenses 70are provided on the color filter 60 of the respective colors.

For manufacturing the so-called back-illuminated CMOS sensor, theelement isolating parts 20 for isolating the light receiving regionscorresponding to the respective colors from each other are formed in thevicinity of a surface (on the lower side, in FIG. 1) of the siliconsubstrate 2 by implantation of P-type impurity ions. Subsequently, thelight receiving regions corresponding to the respective colors areformed between the element isolating parts 20 by implantation of N-typeand P-type impurity ions. Furthermore, transistors Tr for pixel drivingand so on and the interconnect layer 40 are formed over the lightreceiving regions.

Examples of the transistor Tr include various kinds of transistors suchas a readout transistor for reading out the charge captured in the lightreceiving region, an amplification transistor for amplifying the outputof a photodiode, a selection transistor for selecting the photodiode,and a reset transistor for discharging the charge.

In this state, a support substrate is attached to the interconnect layer40 side of the silicon substrate 2 and the back surface (on the upperside, in FIG. 1) of the silicon substrate 2 is polished by chemicalmechanical polishing (CMP) with the silicon substrate 2 supported by thesupport substrate. This polishing is performed until the light receivingregions are exposed.

Subsequently, the antireflection film 21 (e.g. HfO film with 64-nmthickness) and the interlayer insulating film 30 (e.g. SiO₂ film with500-nm thickness) are formed on the back surface side of the siliconsubstrate 2, where the light receiving regions are exposed.

Moreover, on the interlayer insulating film 30, the color filter 60(e.g. with 500-nm thickness) corresponding to the light receivingregions is formed, and the microlenses 70 (e.g. with a lens partthickness of 350 nm) are formed corresponding to the color filter 60.

These steps complete the solid-state imaging device 1 in which lightincident from the back surface (on the upper side, in FIG. 1) of thesilicon substrate 2 is condensed by the microlenses 70 and light beamsof the respective colors are received by the light receiving regions viathe color filter 60. In this structure, the interconnect layer 40 doesnot exist on the light incidence side of the light receiving regions,and therefore the aperture ratios of the respective light receivingregions can be enhanced.

FIG. 2 is a schematic sectional view for explaining a back-illuminatedCMOS sensor having a light blocking part. The configuration of theback-illuminated CMOS sensor having the light blocking part is basicallythe same as the configuration shown in FIG. 1. Specifically, the colorfilter 60 is provided over one surface of the silicon substrate 2 inwhich the light receiving regions serving as the pixels 10 are provided,and the interconnect layer 40 for signals obtained by photoelectricconversion in the light receiving regions is provided over the othersurface of the silicon substrate 2. Thus, light is incident on the lightreceiving regions from the surface on the opposite side to the surfaceover which the interconnect layer 40 is provided and the photoelectricconversion is carried out in the light receiving regions.

In the CMOS sensor with the configuration shown in FIG. 2, a lightblocking part W is formed in the interlayer insulating film 30 formed onthe antireflection film 21. The light blocking part W is so providedthat light passing through the color filter 60 of the respective colorsis prevented from entering the region other than the light receivingregion of the corresponding pixel 10. The light blocking part W iscomposed of e.g. tungsten and has apertures corresponding to the lightreceiving regions of the respective colors.

[Front-Illuminated CMOS Sensor]

FIG. 3 is a schematic sectional view for explaining a front-illuminatedCMOS sensor. In this solid-state imaging device 1, light receivingregions formed of photodiodes are formed in a silicon substrate 2, andtransistors Tr are formed corresponding to the light receiving regions.

Examples of the transistor Tr include various kinds of transistors suchas a readout transistor for reading out the charge captured in the lightreceiving region, an amplification transistor for amplifying the outputof the photodiode, a selection transistor for selecting the photodiode,and a reset transistor for discharging the charge.

An antireflection film 21 is formed on the transistors Tr, and pluralinterconnect layers 40 are formed with the intermediary of an interlayerinsulating film. An optical waveguide formed of an organic film may beburied in the interconnect layers 40 according to need.

Above the interconnect layers 40, RGB color filters 60 are formed foreach predetermined area in predetermined arrangement order. Furthermore,microlenses 70 are formed corresponding to the color filters 60 of therespective colors. In the present example, the aperture for one lightreceiving region has a size of 2.5 μm square.

This solid-state imaging device 1 has a structure in which theinterconnect layers 40 and the color filters 60 are provided over onesurface of the silicon substrate 2, in which the light receiving regionsof the pixel parts are provided. That is, in this configuration, themicrolenses 70, the color filters 60, and the interconnect layers 40 areprovided on the light incidence side of the light receiving regions. Inaddition, light is incident from the surface over which the interconnectlayers 40 are provided, of the silicon substrate 2, and photoelectricconversion is carried out in the light receiving regions.

In this solid-state imaging device 1, ambient light is condensed by themicrolenses 70 and separated into light beams each having a wavelengthcorresponding to a predetermined color via the respective color filters60 of RGB. The light beams of RGB reach the light receiving regionsprovided in the silicon substrate 2 via the interconnect layers 40.Subsequently, photoelectric conversion is carried out in the lightreceiving regions, so that electric signals dependent on the amounts oflight beams of RGB are acquired by driving of the transistors Tr.

In the solid-state imaging device 1 formed of the front-illuminated CMOSsensor, the interconnect of the uppermost layer among the interconnectlayers 40 is used also as the light blocking part W. Specifically, bysetting the position and width of this interconnect to predeterminedvalues, light passing through the color filters 60 of the respectivecolors is prevented from entering the region other than the lightreceiving region of the corresponding pixel 10.

[Configuration of CMOS Image Sensor]

FIG. 4 is a diagram for explaining the entire configuration of asolid-state imaging device formed of a CMOS image sensor. As shown inFIG. 4, a CMOS image sensor 50 has a pixel array unit 51 formed on asemiconductor substrate (chip) (not shown) and peripheral circuitsprovided on the same semiconductor substrate as that of the pixel arrayunit 51. As the peripheral circuits of the pixel array unit 51, avertical drive circuit 52, column circuits 53 as signal processingcircuits, a horizontal drive circuit 54, an output circuit 55, a timinggenerator (TG) 56, and so on are used.

In the pixel array unit 51, unit pixels (hereinafter, the unit pixelwill be often referred to simply as the “pixel”) 6 are two-dimensionallydisposed in a matrix. The unit pixel 6 includes a photoelectricconversion element that carries out photoelectric conversion of incidentvisible light into the amount of charge dependent on the amount oflight. The specific configuration of the unit pixel 6 will be describedlater.

Furthermore, in the pixel array unit 51, for the matrix arrangement ofthe unit pixels 6, a pixel drive line 57 is formed for each pixel rowalong the horizontal direction of the diagram (the arrangement directionof the pixels on the pixel row) and a vertical signal line 58 is formedfor each pixel column along the vertical direction of the diagram (thearrangement direction of the pixels on the pixel column). In FIG. 4, oneline is shown as each pixel drive line 57. However, the number of pixeldrive lines 57 per each row is not limited to one. One end of the pixeldrive line 57 is connected to the output terminal of the vertical drivecircuit 52, corresponding to a respective one of the pixel rows.

The vertical drive circuit 52 is composed of shift registers, addressdecoders, and so on. The vertical drive circuit 52 has a readoutscanning system for sequentially carrying out selective scanning of thepixels 6 from which signals are to be read out on a row-by-row basis,although the specific configuration thereof is not shown in the diagram.Furthermore, the vertical drive circuit 52 has a sweep scanning systemfor carrying out, for the readout row for which the readout scanning isto be carried out by the readout scanning system, sweep scanning forsweeping out (resetting) the unnecessary charge from the photoelectricconversion elements in the pixels 6 on this readout row earlier thanthis readout scanning by the time corresponding to the shutter speed.

So-called electronic shutter operation is carried out by the sweep(reset) of the unnecessary charge by the sweep scanning system. Theelectronic shutter operation refers to operation of discarding thephoto-charge in the photoelectric conversion element and newly startingexposure (starting accumulation of the photo-charge).

The signal read out by the readout operation by the readout scanningsystem corresponds to the amount of light incident after the previousreadout operation or the electronic shutter operation. Furthermore, theperiod from the readout timing by the previous readout operation or thesweep timing by the electronic shutter operation to the readout timingby the present readout operation is equivalent to the time ofphoto-charge accumulation in the unit pixels 6 (exposure time).

The signals output from the respective unit pixels 6 on the pixel rowselected by scanning by the vertical drive circuit 52 are supplied tothe column circuits 53 via the respective vertical signal lines 58. Thecolumn circuits 53 receive the signals output from the respective pixels6 on the selected row for each pixel column of the pixel array unit 51,and each executes, for the signal, signal processing such as correlateddouble sampling (CDS) for removing fixed pattern noise specific to thepixel, signal amplification, and AD conversion.

In this example, the column circuits 53 are so disposed as to haveone-to-one correspondence with respect to the pixel columns. However,the circuit configuration is not limited thereto. For example, it isalso possible to employ a configuration in which one column circuit 53is disposed per plural pixel columns (vertical signal lines 58) and eachof the column circuits 53 is shared by the plural pixel columns in atime-division manner.

The horizontal drive circuit 54 is composed of shift registers, addressdecoders, and so on, and sequentially outputs a horizontal scanningpulse to thereby select the column circuits 53 in turn. For each of theoutput stages of the column circuits 53, a horizontal selection switchis so provided as to be connected between the output stage and ahorizontal signal line 59, although not shown in the diagram. Thehorizontal scanning pulse sequentially output from the horizontal drivecircuit 54 turns on the horizontal selection switches provided for therespective output stages of the column circuits 53 in turn. Thesehorizontal selection switches are turned on in turn in response to thehorizontal scanning pulse to thereby allow pixel signals processed bythe column circuits 53 on each pixel column basis to be output to thehorizontal signal line 59 in turn.

The output circuit 55 executes various kinds of signal processing forthe pixel signals supplied from the column circuits 53 via thehorizontal signal line 59 in turn and outputs the resulting signals. Asspecific signal processing by the output circuit 55, e.g. merelybuffering is executed in some cases. Alternatively, before thebuffering, black level adjustment, correction of variation among thecolumns, signal amplification, processing relating to the color, and soon are carried out in other cases.

The timing generator 56 generates various kinds of timing signals andcontrols driving of the vertical drive circuit 52, the column circuits53, and the horizontal drive circuit 54 based on these various kinds oftiming signals.

[Circuit Configuration of Unit Pixel]

FIG. 5 is a circuit diagram showing one example of the circuitconfiguration of the unit pixel. The unit pixel 6 relating to thepresent circuit example has, in addition to the photoelectric conversionelement serving as the light receiving part, such as a photodiode 61,e.g. four transistors of a transfer transistor 62, a reset transistor63, an amplification transistor 64, and a selection transistor 65.

In this example, e.g. N-channel MOS transistors are used as thesetransistors 62 to 65. However, the combination of the conductivity typeof the transfer transistor 62, the reset transistor 63, theamplification transistor 64, and the selection transistor 65 in thisexample is merely one example and the combination of the conductivitytype is not limited thereto.

For this unit pixel 6, as the pixel drive line 57, e.g. three driveinterconnects of a transfer line 571, a reset line 572, and a selectionline 573 are provided in common to the respective pixels on the samepixel row. One end of each of the transfer line 571, the reset line 572,and the selection line 573 is connected to the output terminal of thevertical drive circuit 52, corresponding to the pixel row, on each pixelrow basis.

The anode of the photodiode 61 is connected to the negative-side powersupply such as the ground, and carries out photoelectric conversion ofreceived light to a photo-charge (photoelectrons, in this example) withthe amount of charge dependent on the amount of received light. Thecathode electrode of the photodiode 61 is electrically connected to thegate electrode of the amplification transistor 64 via the transfertransistor 62. The node electrically connected to the gate electrode ofthe amplification transistor 64 is referred to as a floating diffusion(FD) part (charge voltage converter) 66.

The transfer transistor 62 is connected between the cathode electrode ofthe photodiode 61 and the FD part 66. The transfer transistor 62 isturned to the on-state in response to supply of a transfer pulse φTRFwhose high level (e.g. Vdd level) corresponds to the active state(hereinafter, such a pulse will be represented as a “High-active pulse”)to the gate electrode via the transfer line 571. Thereby, the transfertransistor 62 transfers the photo-charge arising from the photoelectricconversion by the photodiode 61 to the FD part 66.

The drain electrode of the reset transistor 63 is connected to the pixelpower supply Vdd, and the source electrode thereof is connected to theFD part 66. The reset transistor 63 is turned to the on-state inresponse to supply of a High-active reset pulse φRST to the gateelectrode via the reset line 572. Thereby, prior to the transfer of thesignal charge from the photodiode 61 to the FD part 66, the resettransistor 63 discards the charge of the FD part 66 toward the pixelpower supply Vdd to thereby reset the FD part 66.

The gate electrode of the amplification transistor 64 is connected tothe FD part 66, and the drain electrode thereof is connected to thepixel power supply Vdd. The amplification transistor 64 outputs thepotential of the FD part 66 obtained after the reset by the resettransistor 63 as the reset level. In addition, the amplificationtransistor 64 outputs the potential of the FD part 66 obtained after thetransfer of the signal charge by the transfer transistor 62 as thesignal level.

For example, the drain electrode of the selection transistor 65 isconnected to the source of the amplification transistor 64, and thesource electrode thereof is connected to the vertical signal line 58.The selection transistor 65 is turned to the on-state in response tosupply of a High-active selection pulse φSEL to the gate via theselection line 573. Thereby, the selection transistor 65 sets the unitpixel 6 to the selected state and relays the signal output from theamplification transistor 64 to the vertical signal line 58.

It is also possible to employ a circuit configuration in which theselection transistor 65 is connected between the pixel power supply Vddand the drain of the amplification transistor 64.

Furthermore, the unit pixel 6 is not limited to that having the pixelconfiguration formed of four transistors with the above-describedconfiguration but may be one having a pixel configuration formed ofthree transistors one of which serves as both the amplificationtransistor 64 and the selection transistor 65. The configuration of thepixel circuit thereof may be any.

[CCD Sensor]

FIGS. 6A and 6B are schematic diagrams for explaining a charge coupleddevice (CCD) sensor: FIG. 6A is an overall plan view and FIG. 6B is asectional view along line A-A in FIG. 6A. As shown in FIG. 6A, thissolid-state imaging device 1 includes plural pixels 10 arranged in amatrix in an imaging area S and plural vertical transfer registers VTthat correspond to the columns of the pixels 10 and have a CCDstructure. Furthermore, this solid-state imaging device 1 includes ahorizontal transfer register HT that has a CCD structure and transfers asignal charge transferred by the vertical transfer register VT to anoutput unit, and an output unit OP connected to the final stage of thehorizontal transfer register HT.

In this solid-state imaging device 1, a charge is accumulated dependingon the light received by the pixel 10, and this charge is read out tothe vertical transfer register VT at a predetermined timing and issequentially transferred by voltage with plural phases applied fromelectrodes above the vertical transfer register VT. Furthermore, thecharge reaching the horizontal transfer register HT is sequentiallytransferred to the output unit OP and is output as predetermined voltagefrom the output unit OP.

As shown in FIG. 6B, electrodes D are provided for the vertical transferregister VT. The electrodes D are formed in plural layers although notshown in the diagram. The electrodes D are so provided that the adjacentelectrodes D partially overlap with each other. Voltage with differentphases is sequentially applied to these plural electrodes D. Thereby,the charge accumulated in the pixel 10 is read out and transferred inthe vertical direction. A light blocking part W is formed for theelectrode D for the vertical transfer register VT provided between thepixels 10 to thereby suppress the incidence of unnecessary light.

[Layout in Imaging Area]

FIG. 7 is a schematic plan view for explaining the layout in the imagingarea. In any of the above-described configuration examples, the pluralpixels 10 are disposed in a matrix in the imaging area S. Each pixel 10receives light of the color necessary for obtaining a color image due tothe color filter. As the colors, e.g. the combination of red (R), green(G), and blue (B) or the combination of yellow (Y), cyan (C), magenta(M), and green (G) is used. In the embodiments, the combination of red(R), green (G), and blue (B) is employed as an example.

The respective pixels 10 in the imaging area S are disposed withpredetermined arrangement so as to each capture light of any of thecolors of red (R), green (G), and blue (B). There are various kinds ofarrangement as the corresponding color arrangement. In the embodiments,the Bayer array, in which red (R), blue (B), first green (Gr), andsecond green (Gb) are disposed in a 2×2 matrix vertically andhorizontally, is employed as an example. In this array, one pixel unit100 is configured by total four pixels 10, i.e. 2×2 pixels of red (R),blue (B), first green (Gr), and second green (Gb). Although first green(Gr) and second green (Gb) are allocated to different pixels, the pixelstreat the same color. In the imaging area S, plural pixel units 100 arearranged in a matrix.

2. Energy Profile

[Profile in Pixel Unit]

FIG. 8 is a diagram showing an example of the energy profile in thepixel unit. This diagram shows the intensity and spread of theirradiation energy on the silicon substrate surface, of the respectivecolors (wavelengths) of B, R, Gr, and Gb. According to this diagram, thelight of blue (B) has the highest intensity and smallest spread of theirradiation energy. On the other hand, the light of red (R) has thelowest intensity and largest spread of the irradiation energy.

[Change Dependent on Image Height]

FIGS. 9A to 10B are diagrams for explaining change in the energy profiledependent on the image height. FIGS. 9A and 9B show the energy profilesof a blue (B) pixel and a green (Gb) pixel. FIGS. 10A and 10B show theenergy profiles of a red (R) pixel and a green (Gr) pixel. In FIGS. 9Ato 10B, FIGS. 9A and 10A show the state when the image height is 0% (atthe center of the imaging area), and FIGS. 9B and 10B show the statewhen the image height is 100% (at an edge of the imaging area).

This energy profiles are obtained from the back-illuminated CMOS sensorhaving the light blocking part W, shown in FIG. 2. Specifically, thisback-illuminated CMOS sensor has a layer configuration including thefollowing components over the silicon substrate 2, in which the lightreceiving regions formed of photodiodes are formed: an HfO film (64-nmthickness) as the antireflection film 21, a tungsten film (150-nmthickness) as the light blocking part W, an SiO₂ film (550-nm thickness)as the interlayer insulating film 30, the color filter 60 (500-nmthickness), and the microlenses 70 (750-nm thickness (the lens partthickness is 350 nm)).

The plan view of the apertures of the light blocking part W is as shownin FIG. 11. The aperture size is made different for each of the RGBcolors in order to regulate the output balance based on the energyprofile shown in FIG. 8. For example, the aperture corresponding to red(R) has a size of 800 nm square. The aperture corresponding to green(Gr, Gb) has a size of 700 nm square. The aperture corresponding to blue(B) has a size of 600 nm square. Furthermore, the pixel size in planview (light reception area) is 0.9 μm square, and the color filterarrangement is based on the Bayer array.

The sectional view of the energy profile made directly above the lightblocking part in this pixel structure corresponds to FIGS. 9A to 10B.FIGS. 9A and 9B show the result of simulation with single-color lightwith a wavelength of 450 nm (blue), and FIGS. 10A and 10B show result ofsimulation with single-color light with a wavelength of 650 nm (red). Ineach simulation, the pixel is irradiated with collimated light.

FIG. 9A and FIG. 10A show the energy profiles when the image height is0% (at the center of the imaging area). The energy spread of the red (R)pixel shown in FIG. 10A is larger than that of the blue (B) pixel shownin FIG. 9A.

FIG. 9B and FIG. 10B show the energy profiles when the image height is100% (at an edge of the imaging area). The energy profiles are based onthe assumption that a lens whose main light beam incidence angle is 20°when the image height is 100% is used. Both in the red (R) and in theblue (B), the light energy is not concentrated at the pixel center butin a shifted state.

For example, according to the profile shown in FIG. 9B, the light thatshould be received by the blue (B) pixel enters the adjacentsecond-green (Gb) pixel. Furthermore, according to the profile shown inFIG. 10B, the light that should be received by the red (R) pixel entersthe adjacent first-green (Gr) pixel. In this manner, the energy profilechanges depending on the image height and the center is shifted, whichcauses sensitivity deterioration and color cross-talk.

Specific embodiments of the present invention will be described below.Any of the above-described configuration examples can be applied tosolid-state imaging devices according to the embodiments. The followingdescription will be made by taking solid-state imaging devices eachemploying a back-illuminated CMOS sensor as an example.

3. First Embodiment

FIG. 12 is a schematic diagram for explaining a first embodiment. In asolid-state imaging device according to the first embodiment, the amountof shift is set for the position of the pixels 10 of the respectivecolors in the pixel unit 100 depending on the distance from the centerof the imaging area S, i.e. the image height. This amount of shift is soset as to differ from color to color.

In FIG. 12, an enlarged view of each of the pixel unit 100 correspondingto the position at which the image height is 0% and the pixel unit 100corresponding to the position at which the image height is other than 0%is shown. In each pixel unit 100, four pixels 10 in the pixel unit 100are disposed at predetermined positions on the basis of the center ο ofthe pixel unit 100.

For four pixels 10 in the pixel unit 100 corresponding to the positionat which the image height is 0%, the center positions of the respectivepixels 10 in the xy coordinate system whose origin is the center ο ofthe pixel unit 100 are shown as follows.

the center position of the R pixel 10 . . . (Xr, Yr)

the center position of the Gr pixel 10 . . . (Xgr, Ygr)

the center position of the B pixel 10 . . . (Xb, Yb)

the center position of the Gb pixel 10 . . . (Xgb, Ygb)

For four pixels 10 in the pixel unit 100 corresponding to the positionat which the image height is 100%, the center positions of therespective pixels 10 in the xy coordinate system whose origin is thecenter ο of the pixel unit 100 are shown as follows.

the center position of the R pixel 10 . . . (Xr′, Yr′)

the center position of the Gr pixel 10 . . . (Xgr′, Ygr′)

the center position of the B pixel 10 . . . (Xb′, Yb′)

the center position of the Gb pixel 10 . . . (Xgb′, Ygb′)

In the solid-state imaging device 1, the amount of shift is set for theposition of the pixels 10 of the corresponding colors in the pixel unit100 depending on the image height. This feature is response to thecharacteristic that the center position of the energy profile is shifteddepending on the image height as shown in FIGS. 9A to 10B.

The amounts of shift of the pixels 10 of the respective colors in thepixel unit 100 dependent on the image height are as follows.

(the amount ΔR of shift of the R pixel)ΔR=√(Xr′−Xr)²+(Yr′−Yr)²(the amount ΔGr of shift of the Gr pixel)ΔGr=√(Xgr′−Xgr)²+(Ygr′−Ygr)²(the amount ΔB of shift of the B pixel)ΔB=√(Xb′−Xb)²+(Yb′−Yb)²(the amount ΔGb of shift of the Gb pixel)ΔGb=√(Xgb′−Xgb)²+(Ygb′−Ygb)²

In the solid-state imaging device of the first embodiment, the amount ΔRof shift of the R pixel, the amount ΔGr of shift of the Gr pixel, theamount ΔB of shift of the B pixel, and the amount ΔGb of shift of the Gbpixel are so set as to differ corresponding to the respective colors.Specifically, the amount of shift of the center position of the energyprofile dependent on the image height is obtained in advance for each ofthe colors of red (R), green (G), and blue (B). In matching with theseamounts of shift, the values of ΔR, ΔGr, ΔB, and ΔGb are set on acolor-by-color basis.

Specifically, the value of ΔR is set in matching with the shift of thecenter position of the energy profile in red (R) dependent on the imageheight. The values of ΔGr and ΔGb are set in matching with the shift ofthe center position of the energy profile in green (G) dependent on theimage height. The value of ΔB is set in matching with the shift of thecenter position of the energy profile in blue (B) dependent on the imageheight. Thereby, the color shift in each pixel unit 100 is suppressedover the area from the center of the imaging area S to the peripherythereof.

The directions of the movement of the respective pixels 10 based on ΔR,ΔGr, ΔB, and ΔGb are directions toward the position at which the imageheight is 0%. The values of ΔR, ΔGr, ΔB, and ΔGb can be obtained fromfunctions including the image height as a variable or can be obtainedfrom table data.

4. Second Embodiment

FIG. 13 is a schematic diagram for explaining a second embodiment. In asolid-state imaging device according to the second embodiment, inaddition to the configuration of the first embodiment, difference is setin the magnitude of the light reception area of the pixels 10 of therespective colors in the pixel unit 100 depending on the image height,and the difference in the magnitude is so set as to differ from color tocolor.

In FIG. 13, an enlarged view of each of the pixel unit 100 correspondingto the position at which the image height is 0% and the pixel unit 100corresponding to the position at which the image height is other than 0%is shown. In each pixel unit 100, four pixels 10 in the pixel unit 100are provided with the respective light reception areas.

For four pixels 10 in the pixel unit 100 corresponding to the positionat which the image height is 0%, the light reception areas of therespective pixels 10 are shown as follows.

the light reception area of the R pixel 10 . . . Qr

the light reception area of the Gr pixel 10 . . . Qgr

the light reception area of the B pixel 10 . . . Qb

the light reception area of the Gb pixel 10 . . . Qgb

For four pixels 10 in the pixel unit 100 corresponding to the positionat which the image height is 100%, the light reception areas of therespective pixels 10 are shown as follows.

the light reception area of the R pixel 10 . . . Qr′

the light reception area of the Gr pixel 10 . . . Qgr′

the light reception area of the B pixel 10 . . . Qb′

the light reception area of the Gb pixel 10 . . . Qgb′

In the solid-state imaging device 1, difference is set in the magnitudeof the light reception area of the pixels 10 of the corresponding colorsin the pixel unit 100 depending on the image height. This feature isresponse to the characteristic that the spread of the energy profilechanges depending on the image height as shown in FIGS. 9A to 10B.

The differences in the magnitude of the light reception area of thepixels 10 of the respective colors in the pixel unit 100 dependent onthe image height are as follows.

(the difference ΔQR in the magnitude of the light reception area of theR pixel)ΔQR=Qr′−Qr(the difference ΔQGr in the magnitude of the light reception area of theGr pixel)ti ΔQGr=Qgr′−Qgr(the difference ΔQB in the magnitude of the light reception area of theB pixel)ΔQB=Qb′−Qb(the difference ΔQGb in the magnitude of the light reception area of theGb pixel)ΔQGb=Qgb′−Qgb

In the solid-state imaging device of the second embodiment, the valuesof ΔQR, ΔQGr, ΔQB, and ΔQGb are so set as to differ corresponding to therespective colors. Specifically, the change in the spread of the energyprofile dependent on the image height is obtained in advance for each ofthe colors of red (R), green (G), and blue (B). In matching with thesechanges, the values of ΔQR, ΔQGr, ΔQB, and ΔQGb are set on acolor-by-color basis.

Specifically, the value of ΔQR is set in matching with the change in thespread of the energy profile in red (R) dependent on the image height.The values of ΔQGr and ΔQGb are set in matching with the change in thespread of the energy profile in green (G) dependent on the image height.The value of ΔQB is set in matching with the change in the spread of theenergy profile in blue (B) dependent on the image height. Thereby, thecolor shift in each pixel unit 100 is suppressed over the area from thecenter of the imaging area S to the periphery thereof.

The values of ΔQR, ΔQGr, ΔQB, and ΔQGb can be obtained from functionsincluding the image height as a variable or can be obtained from tabledata.

5. Third Embodiment

FIG. 14 is a schematic diagram for explaining a third embodiment. In asolid-state imaging device according to the third embodiment, the amountof shift is set for the position of the apertures of a light blockingpart W for the corresponding pixels in each pixel unit 100. This amountof shift is so set as to differ from color to color.

In FIG. 14, an enlarged view of each of the pixel unit 100 correspondingto the position at which the image height is 0% and the pixel unit 100corresponding to the position at which the image height is other than 0%is shown. In each pixel unit 100, the apertures of the light blockingpart W corresponding to four pixels 10 in the pixel unit 100 aredisposed at predetermined positions on the basis of the center ο of thepixel unit 100.

For four pixels 10 in the pixel unit 100 corresponding to the positionat which the image height is 0%, the center positions of the aperturesof the light blocking part W for the respective pixels 10 in the xycoordinate system whose origin is the center ο of the pixel unit 100 areshown as follows.

the aperture Wr of the light blocking part W for the R pixel 10 . . .(Xwr, Ywr)

the aperture Wgr of the light blocking part W for the Gr pixel 10 . . .(Xwgr, Ywgr)

the aperture Wb of the light blocking part W for the B pixel 10 . . .(Xwb, Ywb)

the aperture Wgb of the light blocking part W for the Gb pixel 10 . . .(Xwgb, Ywgb)

For four pixels 10 in the pixel unit 100 corresponding to the positionat which the image height is 100%, the center positions of the aperturesof the light blocking part W for the respective pixels 10 in the xycoordinate system whose origin is the center ο of the pixel unit 100 areshown as follows.

the aperture Wr of the light blocking part W for the R pixel 10 . . .(Xwr′, Ywr′)

the aperture Wgr of the light blocking part W for the Gr pixel 10 . . .(Xwgr′, Ywgr′)

the aperture Wb of the light blocking part W for the B pixel 10 . . .(Xwb′, Ywb′)

the aperture Wgb of the light blocking part W for the Gb pixel 10 . . .(Xwgb′, Ywgb′)

In the solid-state imaging device 1, the amount of shift is set for theposition of the apertures of the light blocking part W for the pixels 10of the corresponding colors in the pixel unit 100 depending on the imageheight. This feature is response to the characteristic that the centerposition of the energy profile is shifted depending on the image heightas shown in FIGS. 9A to 10B.

The amounts of shift for the pixels 10 of the respective colors in thepixel unit 100 dependent on the image height are as follows.

(the amount ΔWR of shift of the aperture Wr for the R pixel)ΔWR=√(Xwr′−Xwr)²+(Ywr′−Ywr)²(the amount ΔWGr of shift of the aperture Wgr for the Gr pixel)ΔWGr=√(Xwgr′″Xwgr)²+(Ywgr′−Ywgr)²(the amount ΔWB of shift of the aperture Wb for the B pixel)ΔWB=√(Xwb′−Xwb)²+(Ywb′−Ywb)²(the amount ΔWGb of shift of the aperture Wgb for the Gb pixel)ΔWGb=√(Xwgb′−Xwgb)²+(Ywgb′−Ywgb)²

In the solid-state imaging device of the third embodiment, theabove-described ΔWR, ΔWGr, ΔWB, and ΔWGb are so set as to differcorresponding to the respective colors. Specifically, the amount ofshift of the center position of the energy profile dependent on theimage height is obtained in advance for each of the colors of red (R),green (G), and blue (B). In matching with these amounts of shift, thevalues of ΔWR, ΔWGr, ΔWB, and ΔWGb are set on a color-by-color basis.

Specifically, the value of ΔWR is set in matching with the shift of thecenter position of the energy profile in red (R) dependent on the imageheight. The values of ΔWGr and ΔWGb are set in matching with the shiftof the center position of the energy profile in green (G) dependent onthe image height. The value of ΔWB is set in matching with the shift ofthe center position of the energy profile in blue (B) dependent on theimage height. Thereby, the color shift in each pixel unit 100 issuppressed over the area from the center of the imaging area S to theperiphery thereof.

The directions of the movement of the respective apertures based on ΔWR,ΔWGr, ΔWB, and ΔWGb are directions toward the position at which theimage height is 0%. The values of ΔWR, ΔWGr, ΔWB, and ΔWGb can beobtained from functions including the image height as a variable or canbe obtained from table data.

6. Fourth Embodiment

FIG. 15 is a schematic diagram for explaining a fourth embodiment. In asolid-state imaging device according to the fourth embodiment, inaddition to the configuration of the third embodiment, difference is setin the size of the apertures of the light blocking part W for the pixels10 of the respective colors in the pixel unit 100 depending on the imageheight, and the difference in the size is so set as to differ from colorto color.

In FIG. 15, an enlarged view of each of the pixel unit 100 correspondingto the position at which the image height is 0% and the pixel unit 100corresponding to the position at which the image height is other than 0%is shown. In each pixel unit 100, the apertures of the light blockingpart W for four pixels 10 in the pixel unit 100 are provided with therespective sizes.

For four pixels 10 in the pixel unit 100 corresponding to the positionat which the image height is 0%, the sizes of the apertures of the lightblocking part W for the respective pixels 10 are shown as follows.

the size of the aperture Wr of the light blocking part W for the R pixel10 . . . Qwr

the size of the aperture Wgr of the light blocking part W for the Grpixel 10 . . . Qwgr

the size of the aperture Wb of the light blocking part W for the B pixel10 . . . Qwb

the size of the aperture Wgb of the light blocking part W for the Gbpixel 10 . . . Qwgb

For four pixels 10 in the pixel unit 100 corresponding to the positionat which the image height is 100%, the sizes of the apertures of thelight blocking part W for the respective pixels 10 are shown as follows.

the size of the aperture Wr of the light blocking part W for the R pixel10 . . . Qwr′

the size of the aperture Wgr of the light blocking part W for the Grpixel 10 . . . Qwgr′

the size of the aperture Wb of the light blocking part W for the B pixel10 . . . Qwb′

the size of the aperture Wgb of the light blocking part W for the Gbpixel 10 . . . Qwgb′

In the solid-state imaging device 1, difference is set in the size ofthe apertures of the light blocking part W for the pixels 10 of thecorresponding colors in the pixel unit 100 depending on the imageheight. This feature is response to the characteristic that the spreadof the energy profile changes depending on the image height as shown inFIGS. 9A to 10B.

The differences in the size of the aperture of the light blocking part Wfor the pixels 10 of the respective colors in the pixel unit 100dependent on the image height are as follows.

(the difference ΔQWR in the size of the aperture Wr for the R pixel)ΔQWR=Qwr′−Qwr(the difference ΔQWGr in the size of the aperture Wgr for the Gr pixel)ΔQWGr=Qwgr′−Qwgr(the difference ΔQWB in the size of the aperture Wb for the B pixel)ΔQWB=Qwb′−Qwb(the difference ΔQWGb in the size of the aperture Wgb for the Gb pixel)ΔQWGb=Qwgb′−Qwgb

In the solid-state imaging device of the fourth embodiment, the valuesof ΔQWR, ΔQWGr, ΔQWB, and ΔQWGb are so set as to differ corresponding tothe respective colors. Specifically, the change in the spread of theenergy profile dependent on the image height is obtained in advance foreach of the colors of red (R), green (G), and blue (B). In matching withthese changes, the values of ΔQWR, ΔQWGr, ΔQWB, and ΔQWGb are set on acolor-by-color basis.

Specifically, the value of ΔQWR is set in matching with the change inthe spread of the energy profile in red (R) dependent on the imageheight. The values of ΔQWGr and ΔQWGb are set in matching with thechange in the spread of the energy profile in green (G) dependent on theimage height. The value of ΔQWB is set in matching with the change inthe spread of the energy profile in blue (B) dependent on the imageheight. Thereby, the color shift in each pixel unit 100 is suppressedover the area from the center of the imaging area S to the peripherythereof.

The values of ΔQWR, ΔQWGr, ΔQWB, and ΔQWGb can be obtained fromfunctions including the image height as a variable or can be obtainedfrom table data.

The above-described first to fourth embodiments may be eachindependently employed and may be employed in appropriate combination.Specifically, the setting of the positions of the pixels according tothe first embodiment may be combined with the setting of the positionsof the apertures of the light blocking part for the pixels according tothe third embodiment. Furthermore, the setting of the positions of thepixels according to the first embodiment may be combined with thesetting of the sizes of the apertures of the light blocking part for thepixels according to the fourth embodiment. In addition, the setting ofthe light reception areas of the pixels according to the secondembodiment may be combined with the setting of the positions of theapertures of the light blocking part for the pixels according to thethird embodiment.

FIG. 16 is a diagram for explaining the difference in the amount ofshift from color to color. In this diagram, the image height isindicated on the abscissa and the amount of shift of the position of thepixel and the position of the aperture of the light blocking part in thepixel unit is indicated on the ordinate. The amount of shift is largerin the order of red (R), green (G), and blue (B), and the differencereaches about 0.1 μm when the image height is 100%. In the embodiments,in matching with the amount of shift in which the difference arisesamong the respective colors of RGB, the amount of shift of the positionof the pixel and the position of the aperture of the light blocking partin the pixel unit is set on a color-by-color basis.

FIGS. 17A and 17B are diagrams showing the effect of the embodiments.FIG. 17A shows an example of the case in which the embodiment is notemployed, and FIG. 17B shows an example of the case in which theembodiment (the setting of the position of the pixel and the setting ofthe position of the aperture of the light blocking part) is employed. Ineach diagram, the abscissa indicates the image height and the ordinateindicates the light reception sensitivity.

In the case in which the embodiment is not employed, shown in FIG. 17A,although the values of the light reception sensitivity are the sameamong the respective colors of RGB when the image height is 0%, increasein the image height yields large variation in the light receptionsensitivity among the respective colors of RGB, which causes a highdegree of color shading. On the other hand, in the case in which theembodiment is employed, shown in FIG. 17B, large variation in the lightreception sensitivity among the respective colors of RGB is not causedeven when the image height is increased from 0%, and thus the occurrenceof color shading can be suppressed.

7. Electronic Apparatus

FIG. 18 is a block diagram showing a configuration example of imagingapparatus as one example of electronic apparatus based on theembodiment. As shown in FIG. 18, imaging apparatus 90 has an opticalsystem including a lens group 91, a solid-state imaging device 92, a DSPcircuit 93 as a camera signal processing circuit, a frame memory 94, adisplay device 95, a recording device 96, an operating system 97, apower supply system 98, and so on. Of these components, the DSP circuit93, the frame memory 94, the display device 95, the recording device 96,the operating system 97, and the power supply system 98 are connected toeach other via a bus line 99.

The lens group 91 captures incident light (image light) from a subjectand forms the image on the imaging plane of the solid-state imagingdevice 92. The solid-state imaging device 92 converts the amount oflight of the incident light from which the image is formed on theimaging plane by the lens group 91 into an electric signal on apixel-by-pixel basis, and outputs the electric signal as a pixel signal.As this solid-state imaging device 92, the solid-state imaging device ofany of the above-described embodiments is used.

The display device 95 is formed of a panel display device such as aliquid crystal display device or an organic electro luminescence (EL)display device, and displays a moving image or a still image obtained bythe imaging by the solid-state imaging device 92. The recording device96 records a moving image or a still image obtained by the imaging bythe solid-state imaging device 92 in a recording medium such as anonvolatile memory, a video tape, or a digital versatile disk (DVD).

The operating system 97 issues an operation command about variousfunctions of the present imaging apparatus under operation by a user.The power supply system 98 appropriately supplies various kinds of powerserving as the operating power for the DSP circuit 93, the frame memory94, the display device 95, the recording device 96, and the operatingsystem 97 to these supply targets.

Such imaging apparatus 90 is applied to a camera module for mobileapparatus such as a video camcorder, a digital still camera, and acellular phone. By using the solid-state imaging device according to anyof the above-described embodiments as this solid-state imaging device92, imaging apparatus excellent in the color balance can be provided.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factor in so far as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A solid-state imaging device comprising: aplurality of pixel units disposed in a matrix in an imaging area in sucha way that a plurality of pixels corresponding to different colors aretreated as one pixel unit; and a light blocking part providedcorresponding to the plurality of pixel units and having aperturescorresponding to the pixels in each of the pixel units, wherein, thesizes of the apertures of the light blocking part for each of the pixelsin each of the pixel units are so set as to differ depending ondistances from a center of the imaging area to a center of therespective pixel unit and depending on a color of the respective pixel.2. The solid-state imaging device according to claim 1, wherein acircuit that processes a signal obtained by the pixels is formed of acomplementary metal-oxide semiconductor transistor.
 3. The solid-stateimaging device according to claim 1, wherein the pixels are soconfigured as to capture light from a surface on an opposite side to asurface over which an interconnect layer is formed, of a substrate. 4.The solid-state imaging device according to claim 1, wherein a transferpart that transfers a charge captured in the pixels by sequentialapplying of potential with different phases is provided between theplurality of pixel units.
 5. An imaging device, comprising: an imagingarea including a first region and second region, wherein the firstregion is closer to a center of the imaging area than the second region;a light blocking part, including: a first aperture disposedcorresponding to a first pixel of a first color in the first region; asecond aperture disposed corresponding to a second pixel of a secondcolor in the first region; a third aperture disposed corresponding to athird pixel of the first color in the second region; and a fourthaperture disposed corresponding to a fourth pixel of the second color inthe second region, wherein a size of the first aperture is larger than asize of the third aperture, and wherein a size of the second aperture issmaller than a size of the fourth aperture.
 6. The imaging device ofclaim 5, wherein the first color is blue, and wherein the second coloris red.
 7. The imaging device of claim 6, wherein the light shieldingregion further includes: a fifth aperture disposed corresponding to afifth pixel of a third color in the first region; and a sixth aperturedisposed corresponding to a sixth pixel of the third color in the secondregion, wherein a size of the fifth aperture is the same as a size ofthe sixth aperture.
 8. The imaging device of claim 7, wherein the thirdcolor is green.
 9. The imaging device of claim 5, further comprising: asubstrate, wherein the pixels are included in the substrate; and aplurality of color filters adjacent a first surface of the substrate.10. The imaging device according to claim 9, further comprising: aninterconnect layer adjacent a second surface of the substrate.
 11. Theimaging device of claim 10, further comprising: an antireflection film,wherein the antireflection film is between the substrate and the colorfilters.
 12. The imaging device of claim 11, wherein the antireflectionfilm is an HfO film.
 13. The imaging device of claim 12, wherein theantireflection film has a thickness of at least 64 nm.
 14. The imagingdevice of claim 11, further comprising: an interlayer insulating film,wherein the interlayer insulating film is between the antireflectionfilm and the color filters.
 15. The imaging device of claim 14, furthercomprising: a plurality of microlenses, wherein the microlenses areprovided on a side of the color filters opposite the substrate.
 16. Theimaging device of claim 5, wherein the light blocking part is composedof tungsten.
 17. The imaging device of claim 5, further comprising: avertical drive circuit, wherein the vertical drive circuit has a readoutscanning system operable to selective scan the pixels.
 18. The imagingdevice of claim 17, further comprising: a plurality of column circuits,wherein the column circuits receive signals output from respectivepixels.
 19. The imaging device of claim 18, wherein the column circuitsexecute correlated double sampling of the received signals.
 20. Theimaging device of claim 18, wherein the column circuits perform ADconversion.
 21. An electronic apparatus comprising: the imaging deviceaccording to claim 5; and a signal processing circuitry that processes asignal sent from the imaging device.